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[ 2013 | 2012 | 2011 | 2010 ]| 1 | S. Akiyama, T. Baba, M. Imai, T. Akagawa, M. Takahashi, N. Hirayama, H. Takahashi, Y. Noguchi, Hideaki Okayama, T. Horikawa, and T. Usuki, "12.5-Gb/s Operation with 0.29-0.29-V·cm VπL Using Silicon Mach-Zehnder Modulator Based-on Forward-Biased pin Diode", Optics Express, Vol. 20 Issue 3, pp.2911-2923 (2012) |
| 2 | N. Ishikura, T. Baba, E. Kuramochi, M. Notomi, "Large tunable fractional delay in slow light pulse and its application to fast optical correlator", Optics Express, Vol. 19 Issue 24, pp.24102-24108 (2011) |
| 3 | Y. Sato, Y. Tanaka, J. Upham, Y. Takahashi, T. Asano, and S. Noda, "Strong coupling between distant photonic nanocavities and its dynamic control", Nature Photonics, vol. 6, no. 1, pp. 56-61 (2012) |
| 4 | Yutaka Urino, Takanori Shimizu, Makoto Okano, Nobuaki Hatori, Masashige Ishizaka, Tsuyoshi Yamamoto, Takeshi Baba, Takeshi Akagawa, Suguru Akiyama, Tatsuya Usuki, Daisuke Okamoto, Makoto Miura, Masataka Noguchi, Junichi Fujikata, Daisuke Shimura, Hideaki Okayama, Tai Tsuchizawa, Toshifumi Watanabe, Koji Yamada, Seiichi Itabashi, Emiko Saito, Takahiro Nakamura, and Yasuhiko Arakawa, "First demonstration of high density optical interconnects integrated with lasers, optical modulators and photodetectors on a single silicon substrate", Optics Express, Vol. 19 Issue 26, pp.B159-B165 (2011) |
| 5 | S. Saito, K. Oda, T. Takahama, K. Tani, T. Mine, "Germanium Fin Light-Emitting Diode", Applied Physics Letters, 99, 241105(2011) |
| 6 | H. C. Nguyen, Y. Sakai, M. Shinkawa, N. Ishikura, T. Baba, "Photonic crystal silicon optical modulators: carrier-injection and depletion at 10 Gb/s", IEEE J. Sel. Top. Quantum Electron, Vol.48, No.2, pp. 210-220, Feb., 2012 |
| 7 | Satoshi Iwamoto, Yasuhiko Arakawa, "Enhancement of Light Emission from Silicon by Utilizing Photonic Nanostructres", IEICE TRANSACTIONS on Electronics, Vol.E95-C No.2 pp.206-212 |
| 8 | Y. Atsumi, M. Oda, J. H. Kang, N. Nishiyama, and S. Arai, "Athermal wavelength filters toward optical interconnection to LSIs, Photonic Devices using Nanofabrication Technology and Their Applications", IEICE Transactions, Vol. E95-C, No. 2, pp. 229-236, Feb. 2012 |
| 9 | K. Suzuki, H. C. Nguyen, T. Tamanuki, F. Shinobu, Y. Saito, Y. Sakai, T. Baba, "Slow-light-based variable symbol-rate silicon photonics DQPSK receiver", Optics Express, Vol. 20 Issue 4, pp.4796-4804 (2012) |
| 10 | Sylvain Sergent, Munetaka Arita, Satoshi Kako, Satoshi Iwamoto, and Yasuhiko Arakawa, "High-Q (>5000) AlN nanobeam cavity embedding GaN quantum dots", Applied Physics Letters, 100, 121103 (2012) |
| 11 | K. Tanabe, K. Watanabe, and Y. Arakawa, "III-V/Si hybrid photonic devices by direct fusion bonding", Scientific Reports, 2, 349 (2012) |
| 12 | J. Lee, Y. Maeda, Y. Atsumi, Y. Takino, N. Nishiyama and S. Arai, "Low-loss GaInAsP wire waveguide on Si substrate with benzocyclobutene adhesive wafer bonding for membrane photonic circuits", Jpn. J. Appl. Phys., Vol.51 (2012) 042201 |
| 13 | Katsumi Furuya, Ryohei Takei, Toshihiro Kamei, Youichi Sakakibara, and Masahiko Mori, "Basic Study of Coupling on Three-Dimensional Crossing of Si Photonic Wire Waveguide for Optical Interconnection on Inter or Inner Chip", Jpn. J. Appl. Phys., Vol.51 (2012) 04DG12. |
| 14 | Kazuki Tani, Shin-ichi Saito, Yong Lee, Katsuya Oda, Toshiyuki Mine, Toshiki Sugawara and Tatemi Ido, "Light Detection and Emission in Germanium-On-Insulator Diodes", Jpn. J. Appl. Phys., Vol.51 (2012) 04DG09. |
| 15 | Katsuya Oda, Kazuki Tani, Shin-ichi Saito, Tadashi Okumura and Tatemi Ido, "Improving Optical Properties of Ge Layers Fabricated by Epitaxial Growth Combined with Ge Condensation", Jpn. J. Appl. Phys., Vol.51 (2012) 04DG10. |
| 16 | S. Saito, K. Oda, K. Tani, M. Takahashi, E. Nomotoc, T. Okumurac, Y. Suwa, Y. Leec, M. Sagawa, T. Sugawara and T. Ido, "Si/Ge Quantum Well Light-Emitting Diode for Monolithic Integration in Si Photonics Chips", ECS（Electrochemical Society） Transactions vol.45, no.5 (2012) 103. |
| 17 | Ryohei Takei, Emiko Omoda, Masao Suzuki, Shoko Manako, Toshihiro Kamei, Masahiko Mori, and Youichi Sakakibara, "Ultranarrow Silicon Inverse Taper Waveguide Fabricated with Double-Patterning Photolithography for Low-Loss Spot-Size Converter", Appl. Phys. Express, 5 (2012) 052202 |
| 18 | N. Ishikura, R. Hosoi, R. Hayakawa, T. Tamanuki, M. Shinkawa, and T. Baba "Photonic crystal tunable slow light device integrated with multi-heaters, "Appl. Phys. Lett., 100, 221110(2012) ", |
| 19 | Mitsuaki Futami, Takahiko Shindo, Takayuki Koguchi, Keisuke Shinno, Tomohiro Amemiya, Nobuhiko Nishiyama, and Shigehisa Arai, "GaInAsP/InP Lateral Current Injection Laser with Uniformly Distributed Quantum-well Structure", IEEE Photonics Technology Latters, vol. 24, no.11 (2012) |
| 20 | K. Furuya, K. Nakanishi, R. Takei, E. Omoda, M. Suzuki, M. Okano, T. Kamei, M. Mori and Y. Sakakibara,, "Nanometer-scale thickness control of amorphous silicon using isotropic wet-etching and low loss wire waveguide fabrication with the etched material", Appl. Phys. Lett., 100, 251108 (2012) |
| 21 | J. Tatebayashi, Y. Ota, S. Ishida, M. Nishioka, S. Iwamoto and Y. Arakawa, "Site-controlled formation of InAs/GaAs quantum-dot-in-nanowires for single photon emitters", Appl. Phys. Lett., 100, 263101 (2012) |
| 22 | T. Nakaoka, K. Watanabe, N. Kumagai, and Y. Arakawa, "A single-electron probe for buried optically active quantum dot", AIP Advances 2, 032103 (2012). |
| 23 | S. Yamada, B.-S. Song, J. Upham, T. Asano, Y. Tanaka, and S. Noda, "Suppression of multiple photon absorption in a SiC photonic crystal nanocavity operating at 1.55 μm", Optics express, vol. 20, no. 14, pp. 14789–96（2012） |
| 24 | H. Okayama, D. Shimura, H. Takahashi, M. Seki, M. Toyama, T. Sano, H. Yaegashi, T. Horikawa and H. Sasaki, "Mach-Zehnder filter using multiple Si waveguide structure sections for width error tolerance", Electronics Letters, Volume:48, Issue:14, pp.869 - 870 (2012) |
| 25 | Ryohei Takei、Shoko Manako、Emiko Omoda、Masao Suzuki、Masahiko Mori、Yoichi Sakakibara、Toshihiro Kamei, "Transmission Characteristics of μc-Si:H Wire Waveguide at a Wavelength of 1.55 μm", Appl. Phys. Express, 5 (2012) 082501 |
| 26 | T. Tatsumi, K. Tanabe, K. Watanabe, S. Iwamoto and Y. Arakawa, "1.3 um InAs/GaAs quantum dot lasers on Si substrates by low-resistivity, Au-free metal-mediated wafer bonding", J. Appl. Phys. 112 (3), 033107(2012). |
| 27 | N. Hauke, A. Tandaechanurat, T. Zabel, T. Reichert, H. Takagi, M. Kaniber, S. Iwamoto, D. Bougeard, J. J. Finley, G. Abstreiter, Y. Arakawa, "A three-dimensional silicon photonic crystal nanocavity with enhanced emission from embedded germanium islands", New J. Phys. 14 083035 (2012). |
| 28 | Tatsuya Usuki, "Robust optical data transfer on silicon photonics chip", Journal of Lightwave Technology, vol.30, Iss.18 (2012) |
| 29 | S. Sergent, M. Arita, S. Kako, K. Tanabe, S. Iwamoto, Y. Arakawa, "High-Q AlN photonic crystal nanobeam cavities fabricated by layer transfer", Appl. Phys. Lett., 101, 101106 (2012). |
| 30 | Y. Arakawa, S. Iwamoto, M. Nomura, A. Tandaechanurat, and Yasutomo Ota, "Cavity Quantum Electrodynamics and Lasing Oscillation in Single Quantum Dot-Photonic Crystal Nanocavity Coupled Systems", IEEE J. SeL. Top. Quantum Electron. ,18 ,1818(2012) |
| 31 | H. C. Nguyen, S. Hashimoto, M. Shinkawa and T. Baba, "Compact and fast photonic crystal silicon optical modulators", Optics Express, Vol. 20, No.20, pp. 22465-74 (2012) |
| 32 | K. Oda, K. Tani, S. Saito, and T. Ido, "Ge Optical Emitters Fabricated by Ge Condensation and Epitaxial Growth", ECS（Electrochemical Society） Transactions vol.50, no.9 (2013) 277. |
| 33 | K. Choi, M. Arita and Y. Arakawa, "Selective-area growth of thin GaN nanowires by MOCVD", Journal of Crystal Growth 357 58(2012) |
| 34 | J. Tatebayashi, Y. Ota, S. Ishida, M. Nishioka, S. Iwamoto, Y. Arakawa, "Optical Properties of Site-Controlled InGaAs Quantum Dots Embedded in GaAs Nanowires by Selective Metalorganic Chemical Vapor Deposition", Jpn J. Appl. Phys., Vol.51 (2012) 11PE13 |
| 35 | D. Cao, A. Tandaechanurat, S. Nakayama, S.Ishida, S. Iwamoto and Y. Arakawa, "Silicon-Based Three-Dimensional Photonic Crystal Nanocavity Laser with InAs Quantum-Dot Gain", Appl. Phys. Lett., 101, 191107 (2012). |
| 36 | K. Tanabe, K. Watanabe and Y. Arakawa, "1.3 um InAs/GaAs quantum dot lasers on Si rib structures with current injection across direct-bonded GaAs/Si heterointerfaces", Optics Express Vol.20, No.26, pp. B315-B321(2012) |
| 37 | J. Kang, Y. Atsumi, M. Oda, T. Amemiya, N. Nishiyama and S. Arai, "Layer-to-layer grating coupler based on hydrogenated amorphous silicon for three-dimensional optical circuits", Jpn. J. Appl. Phys., Vol.51 (2012) 120203 |
| 38 | 中村滋, 賣野豊, "最先端シリコンフォトニクスデバイス", 電子情報通信学会誌, 平成24年11月号, p1034, (2012) |
| 39 | M. Arita, S. Kako, S. Iwamoto, Y. Arakawa, "Fabrication of AlGaN Two-Dimensional Photonic Crystal Nanocavities by Selective Thermal Decomposition of GaN", Appl. Phys. Express, 5 (2012) 126502 |
| 40 | H. Takagi, Y. Ota, N. Kumagai, S. Ishida, S. Iwamoto, Y. Arakawa, "High Q H1 photonic crystal nanocavities with efficient vertical emission", Optics Express, Vol. 20, pp. 28292-28300 (2012) |
| 41 | 山田浩治, 賣野豊, 中村隆宏, 荒川泰彦, "電子回路システムの省電力化・高速化・小型化にむけた光配線用シリコン光集積回路", NTT技術ジャーナル vol.24, No.12, pp.37-41 (2012) (not reviewed) |
| 42 | Yutaka Urino, Yoshiji Noguchi, Masataka Noguchi, Masahiko Imai, Masashi Yamagishi, Shigeru Saitou, Naoki Hirayama, Masashi Takahashi, Hiroyuki Takahashi, Emiko Saito, Makoto Okano, Takanori Shimizu, Nobuaki Hatori, Masashige Ishizaka, Tsuyoshi Yamamoto, Takeshi Baba, Takeshi Akagawa, Suguru Akiyama, Tatsuya Usuki, Daisuke Okamoto, Makoto Miura, Junichi Fujikata, Daisuke Shimura, Hideaki Okayama, Hiroki Yaegashi, Tai Tsuchizawa, Koji Yamada, Masahiko Mori, Tsuyoshi Horikawa, Takahiro Nakamura, Yasuhiko Arakawa, "Demonstration of 12.5-Gbps Optical Interconnects Integrated with Lasers, Optical Splitters, Optical Modulators and Photodetectors on a Single Silicon Substrate", Optics Express, Vol. 20, No. 26, p.B256 (2012) |
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