Technical Program
ISPEC2012Program (PDF file)December, 3 (Monday)
Venue: Ito International Research Center (IIRC)
Hongo Campus, The University of Tokyo
Registration (9:00-9:45)
Welcome Address (9:45-10:00)
T. Nakano (Deputy Director General for Science and Technology Policy Cabinet Office)
Session A: Opening (10:00-12:30)
10:00 A-1 (Keynote)
Advances in Photonics and Electronics Convergence System Technology: Overview of the PECST Project
Y. Arakawa (The University of Tokyo)
10:30 A-2 (Invited)
Distributed On-Chip Light Sources for Parallel Signal Processing
L. C. Kimerling (Massachusetts Institute of Technology)
11:10 A-3 (Invited)
In search for the ideal hybrid silicon laser
R. Baets (Ghent University - IMEC)
11:50 A-4 (Invited)
IBM CMOS Nanophotonics Technology for Future Exascale Computing Systems
Y. Vlasov (IBM)
12:30-14:00 Lunch break (by own)
Session B: Silicon Nanophotonics Devices & Systems I (14:00-17:40)
14:00 B-1 (Invited)
Integrated Silicon Photonics WDM Links
H. Liu (Intel)
14:40 B-2 (Invited)
Heterogeneous Photonic-Electronic Integration for future Networking and Computing Systems
S. J. Ben Yoo (University of California, Davis)
15:20 B-3
Demonstration of 12.5-Gbps Silicon Optical Interconnects Integrated with Lasers, Optical Splitters, Optical Modulators, and Photodetectors on a Single Silicon Substrate
Y. Urino (PETRA)
15:35 B-4
Silicon Photonic Integration by Using Variable-Shaped-Beam EB Lithography and Immersion ArF Lithography
T. Horikawa (AIST)
15:50-16:10 Break
(Session B contd.)
16:10 B-5
Selective Epitaxial Growth of Strained Ge Modulators
K. Wada (The University of Tokyo)
16:25 B-6
Multi-Channel Operation of Hybrid Integrated Light Sources Using Trident Spot-Size Convertors
for Photonics-Electronics Convergence System
N. Hatori (PETRA)
16:40 B-7
50-Gb/s Silicon Modulator Using Forward-Biased pin Diode
T. Usuki (PETRA)
16:55 B-8
45 GHz Bandwidth of Si Waveguide-Integrated PIN Ge Photodiode
J. Fujikata(PETRA)
17:10 B-9
1.3 μm InAs/GaAs Quantum Dot Lasers on Si Substrates by Wafer Bonding
K. Tanabe (The University of Tokyo)
17:25 B-10
Advanced Light Manipulation with Photonic Crystal Nanostructures
S. Noda (Kyoto University)
Banquet (18:00-20:00): Foyer of Ito International Research Center
December, 4 (Tuesday)
Venue: Ito International Research Center (IIRC)
Hongo Campus, The University of Tokyo
Session C: Silicon Nanophotonics Devices & Systems II (9:30-11:35)
9:30 C-1 (Invited)
Photonic Crystal Cavities for Optical Interconnects
T. F. Krauss (University of York)
10:10 C-2 (Invited)
Integration Strategies for Advanced Photonic Integrated Circuits on Silicon
S. R. Jain and J. E. Bowers (University of California, Santa Barbara)
10:50 C-3 (Invited)
Fully Integrated 100-Gb/s CMOS Optical Transceiver for Board-to-board Interconnects
T. Takemoto (Hitachi)
11:20 C-4
Analysis of Four-Port System for Bistable Memory in Silica Toroid Microcavity
W. Yoshiki (Keio University)
11:35-13:00 Lunch break (by own)
Poster Session (13:00-15:30)
13:00 Poster Preview
14:00 Poster Presentation
P-1
Design Study of Membrane Photonic Integrated Circuit for On-chip Interconnects
Jieun Lee1, Yoshiaki Yamahara1, Takahiko Shindo1, Mitsuaki Futami1, Kyohei Doi1, Nobuhiko Nishiyama1, Shigehisa Arai1,2
(Tokyo Inst. Tech./Japan1, Quantum Nanoelectronics Research Center/Japan2)
P-2
Simulation of Si/SiGe/Si double heterostructure based carrier-injection modulator
Younghyun Kim, Mitsuru Takenaka, Shinichi Takagi
(Univ. Tokyo/Japan)
P-3
A Prospective Sub-micron Range Integration Approach for Photonics-Electronics Heterogeneous Convergence Applications
T. T. Bui, M. Suzuki, F. Kato, N. Watanabe, S. Nemoto, M. Aoyagi
(AIST/Japan)
P-4
High-uniformity MSM Ge Photodetector and its Application to Differential Receivers
Makoto Miura1,2, Junichi Fujikata1,2, Masataka Noguchi1,2, Daisuke Okamoto1,2, Tsuyoshi Horikawa1,3, Yasuhiko Arakawa1,4
(PECST/Japan1, PETRA/Japan2, AIST/Japan3, Univ. Tokyo/Japan4)
P-5
Polarization properties of emission from a self-assembled InAs quantum dot embedded in a Metal-Insulator-Metal waveguide structure
T. Yamamoto1,2, Y. Ota2, S. Ishida3, N. Kumagai1, S. Iwamoto1,2, Y. Arakawa1,2
(NanoQuine, Univ. Tokyo/Japan1, IIS, Univ. Tokyo/Japan2, RCAST, Univ. Tokyo/Japan3)
P-6
Design of Photonic Crystal Waveguide with Mickey-Mouse-Like Air Holes for High Gain Raman Amplification
Y. H. Hsiao, S. Iwamoto, Y. Arakawa
(Univ. Tokyo/Japan)
P-7
Development of Silicon Waveguide Optical Isolator Employing Nonreciprocal Phase Shift
Y. Shirato, Y. Shoji, T. Mizumoto
(Tokyo Inst. Tech./Japan)
P-8
GaInAsP/InP MZI Waveguide Optical Isolator Integrated with Spot Size Converter
Y. Sobu, K. Sakurai, Y. Shoji, T. Mizumoto
(Tokyo Inst. Tech./Japan)
P-9
Demonstration of 2x2 4-Channel Silicon Wavelength-Selective Switch
K. Miura, Y. Shoji, T. Mizumoto
(Tokyo Inst. Tech. /Japan)
P-10
Modification of Epitaxial GaAs Quantum Dot Emission by Gold Nanodisk Chain Waveguides
Jinfa Ho1, Sylvain Sergent1, Alexandre Enderlin1, Satoshi Iwamoto1, 2, Yasuhiko Arakawa1, 2
(Institute for Nano Quantum Information Electronics, Univ. Tokyo/Japan1, Institute of Industrial Science, Univ. Tokyo/Japan2)
P-11
High-speed Si CMOS APD fabricated by standard CMOS process
Toshiyuki Shimotori, Kazuaki Maekita, Takeo Maruyama, Koichi Iiyama
(Kanazawa Univ./Japan)
P-12
MBE growth of GaAs nanowires on silicon substrates
Jinkwan Kwoen1, Katsuyuki Watanabe2, Satoshi Iwamoto1,2, Yasuhiko Arakawa1,2
(IIS, Univ. Tokyo/Japan1, NanoQuine, Univ. Tokyo/Japan2)
P-13
Plasma post-nitridation toward SiGe high-k MOS optical modulators
J. H. Han1, R. Zhang1, T. Osada2, M. Hata2, M. Takenaka1, S. Takagi1
(Univ. Tokyo/Japan1, Sumitomo chemical Corp. Ltd./Japan2)
P-14
40 Gb/s Sub-100 um Photonic Crystal Silicon Optical Modulators
H. C. Nguyen, S. Hashimoto, M. Shinkawa, T. Baba
(Yokohama Nat'l Univ./Japan)
P-15
Si waveguide wavelength filter using high-order-mode selection by waveguide coupler
H. Okayama1,2, Y. Onawa2, D. Shimura1,2, S. Miyamura2, H. Takahashi1,2, H. Yaegashi1,2, H. Sasaki2
(PECST, PETRA/Japan1, Oki Electric Industry Co., Ltd./Japan2)
P-16
Ultrahigh-Speed Slow-Light Tuning using Nonlinear Effects in Photonic Crystal Waveguides
K. Kondo, M. Shinkawa, Y. Saito, T. Baba
(Yokohama Nat’ Univ./Japan)
P-17
Electroluminescence from Germanium Waveguides on Silicon-On-Insulator Diodes
Kazuki Tani1,2,3, Shin-ichi Saito1,2,3, Katsuya Oda1,2,3, Tadashi Okumura3, Toshiyuki Mine3, Tatemi Ido1,2,3
(PETRA/Japan1, PECST/Japan2, Hitachi, Ltd./Japan3)
P-18
Two-Photon Absorption Photodiode using pn-Junction Photonic Crystal Slow-Light Waveguide and Its Applications
R.Hayakawa, N.Isikura, H.C.Nguyen, T.Baba
(Yokohama Nat’l Univ./Japan)
P-19
Improvement of Photoluminescence from Ge Layers with Si3N4 Stressors
Katsuya Oda1, 2, 3, Tadashi Okumura3, Kazuki Tani1, 2, 3, Shin-ichi Saito1, 2, 3, Tatemi Ido1, 2, 3
(PETRA/Japan1, PECST/Japan2, Hitachi Ltd./Japan3)
P-20
First-principles study of optical gain in strained germanium
Yuji Suwa1,2,3, Shin-ichi Saito1,2,3
(PECST/Japan1, PETRA/Japan2, Hitachi, Ltd./Japan3)
P-21
Low Threshold Operation of Lateral Current Injection Type Membrane Laser
T. Shindo1, M. Futami1, K. Doi1, T. Amemiya2, N. Nishiyama1, S. Arai1,2
(Dept. of Electrical and Electronic Engineering, Tokyo Inst. Tech./Japan1, Quantum Nanoelectronics Research Center, Tokyo Inst. Tech./Japan2)
P-22
Slow-light Tuning in Heater-integrated Photonic Crystal Waveguides and Its Applications
N. Ishikura, R. Hosoi, R. Hayakawa, T. Tamanuki, M. Shinkawa, T. Baba
(Yokohama Nat'l Univ./Japan)
P-23
Lasing oscillation in silicon-based three-dimensional photonic crystal nanocavity embedding InAs quantum dots
D. Cao, A. Tandaechanurat, S. Nakayama, S. Ishida, S. Iwamoto, Y. Arakawa
(Institute for Nano Quantum Information Electronics, Univ. Tokyo/Japan)
P-24
Four-Wave Mixing in Dispersion-Controlled Silica-Clad Photonic Crystal Slow Light Waveguides
M. Moro, M. Shinkawa, T. Baba
(Yokohama Nat'l Univ./Japan)
P-25
High Efficient Layer-to-Layer Si Grating Coupler Sandwiched by Metal Reflectors for Intra-Chip Interconnection
J. Kang1, Y. Atsumi1, T. Sifer1, Y. Hayashi1, T. Amemiya2, N. Nishiyama1, S. Arai1,2
(Tokyo Inst. Tech./Japan1, QNERC, Tokyo Inst. Tech./Japan2)
P-26
GaInAsP/SOI Hybrid Laser by N2 Plasma Activated Low Temperature Bonding
Yusuke HAYASHI1, Ryo OSABE1, Keita FUKUDA1, Yuki ATSUMI1, JoonHyun KANG1, Nobuhiko NISHIYAMA 1, Shigehisa ARAI1,2
(Dept. of Electrical and Electronic Engineering,Tokyo Inst. Tech./Japan1, QNERC,Tokyo Inst. Tech./Japan2)
P-27
Wavelength Trimming of Athermal Si Slot Wavelength Filters using Deep-ultraviolet Exposure
Y. Atsumi1, T. Sifer1, J. H. Kang1, N. Nishiyama1, S. Arai1,2
(Dept. of Electrical and Electronic Eng. Elect, Tokyo Inst. Tech./Japan1, QNERC, Tokyo Inst. Tech./Japan2)
P-28
Thermal Analysis of Self-heating Effect in LCI Membrane DFB Laser on Si Substrate
Kyohei Doi1, Takahiko Shindo1, Mitsuaki Futami1, Tomohiro Amemiya2, Nobuhiko Nishiyama1, Shigehisa Arai1,2
(Deptartment of Electrical and Electronic Enginnering, Tokyo Inst. Tech./Japan1, Quantum Nanoelectronics Research Center, Tokyo Ins. Tech./Japan2)
P-29
Ultralow-Loss Silicon Spot-Size Converter Fabricated by Photolithography
Ryohei Takei1,2, Masao Suzuki1,2, Emiko Omoda1,2, Shoko Manako1,2, Toshihiro Kamei1,2, Masahiko Mori1,2, Youichi Sakakibara1,2
(AIST/Japan1, PECST/Japan2)
P-30
Metamaterial photonic devices toward nano-photonics
T. Amemiya1, T. Kanazawa1, A. Ishikawa2, S. Myoga1, E. Murai1, J.H. Kang1, N. Nishiyama1, Y. Miyamoto1, T. Tanaka2, S. Arai1
(Tokyo Inst. Tech./Japan1, RIKEN/Japan2)
P-31
Growth of High Density InAs-Stacked Quantum Dots on Germanium-on-Insulator-on-Silicon Substrate Emitting at 1.3 um for Silicon Photonics
M. Rajesh, J. Tatebayashi, M. Nishioka, Y. Arakawa
(Univ. Tokyo/Japan)
P-32
All Optical Control of a Reflection Spectrum in a Quantum Dot-Photonic Crystal Nanocavity Coupled System
H. Takagi1, Y. Ota2, K. Watanabe2, S. Ishida3, S. Iwamoto1,2, Y. Arakawa1,2
(IIS, Univ. Tokyo/Japan1, NanoQuine, Univ. Tokyo/Japan2, RCAST, Univ. Tokyo/Japan3)
P-33
Design of large-bandwidth single-mode operation waveguides in silicon woodpile structure using two guided modes
Jiapeng Fu1, Aniwat Tandaechanurat 1,2, Satoshi Iwamoto1,2, Yasuhiko Arakawa1,2
(Univ. Tokyo/Japan1, NanoQuine/Japan2)
P-34
High Speed and High Efficiency Si Optical Modulator with MOS Junction ,Using Large-Grain of Poly-Silicon Gate
J. Fujikata1,2, M. Takahashi1,3, S. Takahashi1,2, T. Akagawa1,2, M. Noguchi1,2, T. Horikawa1,3, T. Nakamura1,2, Y. Akarawa1,4
(PECST/Japan1, PETRA/Japan2, AIST/Japan3, Univ. Tokyo/Japan4)
P-35
Time-resolved Photoluminescence study of Ge grown on Si
S. Kako1, K. Oda2,3,4, T. Okumara2,3,4, Y. Suwa2,3,4, S. Saito2,3,4, T. Ido2,3,4, Y. Arakawa1
(Univ. Tokyo/Japan1, PETRA/Japan2, PECST/Japan3, HITACHI/Japan4)
P-36
Direct modulation of silicon nanobeam photonic crystal nanocavity LED
Shigeru Nakayama1,2, Satoshi Iwamoto1,2, Hiroyuki Takagi1,2, Satoshi Kako1, Satomi Ishida3, Yasuhiko Arakawa1,2
(NanoQuine, Univ. Tokyo/Japan1, IIS, Univ. Tokyo/Japan2, RCAST, Univ. Tokyo/Japan3)
P-37
A Study of Compact Matrix Optical Switches Based on Silicon Photonics
Shota Otsuka, Hong. C. Nguyen, Toshihiko Baba
(Yokohama Nat'l. Univ. /Japan)
P-38
Over-100-Channel Hybrid Integrated Light Source on a Silicon Waveguide Platform by Multichip Bonding Technology
T. Shimizu1,2, M. Okano1,3, N. Hatori1,2, M. Ishizaka1,2, Y. Urino1,2, T. Yamamoto1,2, M. Mori1,3, T. Nakamura1,2, Y. Arakawa1,4
(PECST/Japan1, PETRA/Japan2, AIST/Japan3, Univ. Tokyo/Japan4)
P-39
Q factor control of photonic crystal nanobeam cavity with MEMS
Ryuichi Ohta1, Yasutomo Ota2, Hiroyuki Takagi1, Naoto Kumgai2, Katsuaki Tanabe2, Satomi Ishida2, Satoshi Iwamoto1,2, Yasuhiko Arakawa1,2
(Institute of Industrial Science, Univ. Tokyo/1, Institute of Nano Quantum Information Electronics, Univ. Tokyo/2)
P-40
Phase Demodulation with Silicon/silica-hybrid Delay Line Interferometer
R. Kou1,2, H. Fukuda1,2, T. Tsuchizawa1,2, H. Nishi1,2, T. Hiraki1,2, K. Yamada1,2
(NTT Microsystem Integration Labs./Japan1, NTT Nanophotonics Center/Japan2)
P-41
Numerical analysis of S-matrix for silicon-photonics
Tatsuya Usuki
(PETRA/Japan)
P-42
Role of buried heterostructure in photonic-crystal laser for high-temperature and high-output-power operation
T. Kakitsuka1,3, T. Sato1,3, K. Takeda1,3, K. Hasebe2,3, K. Nozaki2,3, M. Notomi1,3, S. Matsuo1,3
(NTT Photonics Labs., NTT Corp./Japan1, NTT Basic Research Labs., NTT Corp./Japan2, Nanophotonics Center, NTT Corp./Japan3)
P-43
16-ch x 10-Gb/s WDM receiver on Si-silica-Ge monolithic integration platform
Tatsurou Hiraki1, 2, Tai Tsuchizawa1, 2, Hidetaka Nishi1, 2, Rai Kou1, 2, Hiroshi Fukuda1, 2, Kotaro Takeda1, Yasuhiko Ishikawa3, Kazumi Wada3, Koji Yamada1, 2
(NTT MI labs./Japan1, NTT NPC/Japan2, Univ. Tokyo/Japan3)
P-44
Mechanical Properties of Optomechanical System with Photonic Crystal Nanocavity
W. Shimizu1, M. Nomura1,2
(IIS, Univ. Tokyo/Japan1, NanoQuine/Japan2)
P-45
Second Harmonic Generation in a Silicon Carbide Photonic Crystal Nanocavity
S. Yamada1, B. S. Song1,2, T. Asano1, Y. Tanaka1, S. Noda1
(Kyoto Univ./Japan1, Sungkyunkwan Univ./Korea2)
P-46
Coupling of high-Q photonic nanocavities and its dynamic control
Takashi Asano, Yoshiya Sato, Yoshinori Tanaka, Susumu Noda
(Kyoto Univ./Japan)
P-47
Theoretical calculation of defects formation under thermal equilibrium in heavily n-type doped germanium
K. Takinai, Y. Ishikawa, K. Wada
(Univ. Tokyo/Japan)
P-48
1550-nm Germanium Light-Emitting Diode by Momentum Conservation Transport
Seongjae Cho
1
, Stanley Cheung
2
, Changjae Yang
3
, Hyungjin Kim
4
, Euijoon Yoon
3
, S. J. Ben Yoo
2
,
Byung-Gook Park
4
, and James S. Harris, Jr.
1
(Stanford Univ. /USA
1
, Univ. California/USA
2
, Dept. of Materials Science and Engineering
3
, Dept. of Electrical
Engineering and Computer Science
4
, Seoul Univ./Korea)
Session D: Silicon Nanophotonics Devices & Systems III (15:30-17:40)
15:30 D-1 (Invited)
Silicon Photonics Technology Platform for High-Speed Communications
P. De Dobbelaere (Luxtera)
16:10 D-2
Silicon Waveguide Optical Circulator
K. Mitsuya (Tokyo Institute of Technology)
16:25 D-3
InGaAsP Photonic-Wire Mach-Zehnder Interferometer Switches Fabricated on III-V CMOS
Photonics Platform
Y. Ikku (The University of Tokyo)
16:40 D-4
Ultra-Compact 8 x 8 Silicon Optical Switch for Application to Next Generation ROADM
S. Nakamura (NEC Corp.)
16:55 D-5
Silicon-based Waveguide Platform for Optical Interconnection
H. Yaegashi (PETRA)
17:10 D-6
Three Dimensional Optical Circuits
M. Mori (AIST)
17:25 D-7
BCB-buried Si Slot Waveguide Filters for Athermal Operation in On/Near-Chip Application
N. Nishiyama (Tokyo Institute of Technology)
December, 5 (Wednesday)
Venue: Lecture Hall, Graduate School of Mathematical Science Building
Komaba Campus, the University of Tokyo
Session E: Silicon Nanophotonics Devices & Systems IV (9:30-11:40)
9:30 E-1 (Invited)
Implementation Path of Si-Photonics - Foundry Model, Challenges, and Opportunities
G. Q. Patrick Lo (Institute of Microelectronics/A*STAR)
10:10 E-2 (Invited)
Multifunctional Platform for Photonics-Electronics Integration
K. Masu (Tokyo Institute of Technology)
10:40 E-3
Photonic Crystal and Related Photonic Nanostructure Devices Fabricated by CMOS Compatible Process
T. Baba (Yokohama National University)
10:55 E-4
Narrow Spectral Linewidth Wavelength Tunable Laser Diode with Si Photonic Wire External
Cavity
T. Kita (Tohoku University)
11:10 E-5
Temperature Control Free Silicon Photonics Transmitter with Si-SOA Hybrid Laser
S. Tanaka (Fujitsu Labs. LTD.)
11:25 E-6
Improvement in Photoluminescence of Coimplanted Germanium by Laser Annealing
L. Y. T. Lee (Stanford University)
11:40-13:15 Lunch break (by own)
Session F: Silicon Nanophotonics Devices & Systems V (13:15-14:45)
13:15 F-1 (Invited)
Advanced Self-Assembled Quantum Dot Lasers
M. Sugawara (QD Laser)
13:45 F-2 (Invited)
Electrically Driven Photonic Crystal Lasers for On-Chip Interconnect
S. Matsuo (NTT)
14:15 F-3
Germanium Based Monolithic Light Sources on Silicon
M. Sagawa (PETRA/Hitachi)
14:30 F-4
Silicon-Based Nano Light Sources Using Photonic Crystal Structures
S. Iwamoto (The University of Tokyo)
Closing Session (14:45-14:50)
