Technical Program
ISPEC2013 Program (PDF file)November, 18 (Monday)
Venue: Ito
International Research Center
Hongo Campus, The University of Tokyo
Registration (9:00-9:40)
Welcome Address
(9:40-9:50)
Y. Matsumoto (Vice President, The University of Tokyo)
Session A: Opening
(9:50-12:30)
9:50 A-1 (Keynote)
Advances in Photonics and Electronics Convergence System Technology:
Overview of the
PECST Project
Y.
Arakawa (The University of Tokyo/PECST)
10:30 A-2 (Invited)
System-Level
Design-for-Function with Microphotonics
L.
C. Kimerling (Massachusetts Institute of
Technology)
11:10 A-3 (Invited)
Hybrid III-V Silicon
Photonic Integrated Circuits and Lasers
J.
E. Bowers (University of California,
Santa Barbara)
11:50 A-4 (Invited)
Prospects and Challenges
for Large-Scale Photonic-Electronic Integrated Circuits
S.
J. Ben Yoo (University of California,
Davis)
12:30-14:00 Lunch
break
Session B: Silicon
Nanophotonics Devices & Systems I (14:00-17:40)
14:00 B-1 (Invited)
Transmission of 25 Gb/s Signals from Integrated Silicon Photonics Transceiver
over Multimode Optical Fibers
H.
Liu (Intel)
14:40 B-2 (Invited)
Silicon Photonics:
Technology Development and Applications
P.
De Dobbelaere (Luxtera)
15:20 B-3
Strain
Tuning of Pure Germanium for Franz-Keldysh Electro-Absorption Modulation
K.
Wada (The University of Tokyo/PECST)
15:35 B-4
Advanced
Light Manipulation with Photonic Crystal Nanostructures
S.
Noda and T. Asano (Kyoto University/PECST)
15:50-16:10 Break
(Session B
contd.)
16:10 B-5
Demonstration
of 30-Tbps/cm2 Bandwidth Density by Silicon Optical Interposers
Fully Integrated with Optical Components
Y.
Urino (PETRA/PECST)
16:25 B-6
Hybrid
Integrated Light Source on a Si Platform Using a Quantum Dot Laser under Wide
Temperature Range
M.
Ishizaka (PETRA/PECST)
16:40 B-7
Low-Voltage-Driven
50-Gb/s Ring-Resonator-Based Silicon Modulator
S.
Akiyama (PETRA/PECST)
16:55 B-8
High Performance PIN Ge Photodetector and Si Optical Modulator
with MOS Junction
J.
Fujikata (PETRA/PECST)
17:10 B-9
Wide Wavelength and Temperature Tolerance
in 10 Gbps Photonic Crystal Modulators
T.
Baba (Yokohama National University/PECST)
17:25 B-10
Multi-Layer
On-Chip Interconnection Using Si Waveguide Devices
N. Nishiyama (Tokyo Institute of
Technology/PECST)
Banquet
(18:00-20:00): Foyer of Ito
International Research Center
November, 19 (Tuesday)
Venue: ENEOS Hall (Oral Sessions & Poster Preview)
Convention Hall (Poster Presentation)
Komaba
Research Campus, The University of Tokyo
Session C: Silicon Nanophotonics Devices & Systems II
(9:30-11:30)
9:30 C-1 (Invited)
Near
Infrared Optical Properties of III-V Core-Shell Nanowires on Si
G.
Abstreiter (Technical University of
Munich)
10:10 C-2 (Invited)
Recent
Silicon Photonic Activities in Europe
L. Fulbert (CEA-LETI)
10:50 C-3 (Invited)
25Gb/s
Silicon-Photonics WDM Platform for Low-Power Optical I/O
J. Van Campenhout (IMEC)
11:30-13:00 Lunch
break
Poster
Session (13:00-15:45)
13:00 Poster preview
13:55 Poster presentation (core time for the
odd-numbered posters)
14:50 Poster presentation (core time for the
even-numbered posters)
Session D:
Silicon Nanophotonics Devices & Systems III (16:00-17:25)
16:00 D-1 (Invited)
MEMS-Based
Integration for Optical Systems
K. Hane (Tohoku
University)
16:40 D-2
Enhancement of Wavelength Characteristic Shift in Si Grating Waveguides
with Ferroelectric Liquid Crystals Cladding
K.
Nakatsuhara (Kanagawa
Institute of Technology)
16:55 D-3
Electrically-driven Permeability
Control of Photonic Metamaterials in Semiconductor Optical Devices
T.
Amemiya (Tokyo Institute of Technology)
17:10 D-4
Introduction of “Photonics
Electronics Convergence Technology For Power-Reducing Jisso System”
Project
T. Mogami
(PETRA/PECST)
November, 20 (Wednesday)
Venue: ENEOS Hall
Komaba
Research Campus, The University of Tokyo
Session E:
Silicon Nanophotonics Devices & Systems IV (9:30-12:00)
9:30 E-1 (Invited)
IBM Silicon Nanophotonics Technology for optical interconnects
in large-scale datacenters and computer systems
Y. A. Vlasov (IBM)
10:10 E-2 (Invited)
Optical Interconnect Project at Huawei
Q. Hao (Huawei
Technologies)
10:50 E-3 (Invited)
Heterogeneous Integration for CMOS
Photonics
M. Takenaka (The University of Tokyo)
11:30 E-4
Crossbenchmarking an Optical Network-on-Chip with an Aggressive Electrical Baseline
with Physical Layer
Awareness
D. Bertozzi (University
of Ferrara)
11:45 E-5
Investigating the Robustness of All-Optical NAND Gates Composed
by Microring Cavities
A. Fushimi (Keio
Univesity)
12:00-13:30 Lunch
break
Session F:
Silicon Nanophotonics Devices & Systems V (13:30-16:20)
13:30 F-1 (Invited)
Bulk
Ge Revisited: Toward Group-IV Interband Laser
S. Fukatsu (The University of Tokyo)
14:10 F-2
High-Performance Silicon Hybrid Lasers
for Energy-Efficient WDM Transmitter
S. Tanaka (PETRA/Fujitsu
Labs.)
14:25 F-3
Performance of Germanium Waveguide Photodiode under High-Voltage
Bias
K. Takeda (NTT)
14:40 F-4
Reduction of Wavelength Dependence of Coupling Characteristics
using Si/SiO2 Optical Waveguide
Curved Directional Coupler
T.
Maruyama (Kanazawa University)
14:55 F-5
Silicon-based Waveguide Platform for Optical Interconnection
H. Fukuda (PETRA/PECST)
15:10 F-6
Three Dimensional Optical Circuits
M. Mori (AIST/PECST)
15:25 F-7
Development of III-V Quantum Dot Lasers on Silicon
K. Tanabe (The University of Tokyo/PECST)
15:40 F-8
Germanium Waveguide Devices on Silicon
M. Sagawa (PETRA/Hitachi/PECST)
15:55 F-9
Silicon Light Emitting Diodes with Photonic Crystal Nanocavities
S. Iwamoto (The
University of Tokyo/PECST)
Closing
Session (16:10-16:20)
Poster Session (Tuesday)
P-1
Analysis of Energy Cost of Membrane
Distributed-Reflector Lasers for On-Chip Optical Interconnection
T. Hiratani1, K. Doi1, Y. Atsuji1,
T. Amemiya2, N. Nishiyama1, S. Arai1,2
(1 Tokyo Inst. Tech., 2 QNERC)
P-2
Time-Resolved Photoluminescence of InAs QDs
Fabricated by In-Flush Technique
M. Senshu1, S. Kitamura1,
Y. Wen1, K. Imai1, T. Katsuyama1, Y. Hino2,
N. Ozaki2, Y. Sugimoto3
(1 Univ. Fukui, 2 Univ. Wakayama, 3 NIMS)
P-3
Si Wire Waveguide AWG with Stray Light Reduction
H. Okayama1,2,3, D. Shimura3, Y. Onawa1,2,3,
H. Takahashi1,2,3, M. Seki2,4, K. Koshino2,4,
N. Yokoyama2,4, M. Ohtsuka2,4, N. Hirayama2,4,
T. Tsuchizawa1,2,5, H. Nishi1,2,5, K. Yamada1,2,5,
H. Yaegashi1,2,3, T. Horikawa2,4, H. Sasaki3
(1 PETRA, 2 PECST, 3 Oki Electric
Industry, 4 AIST, 5 NTT Microsystem Integration Laboratories)
P-4
Humidity Tolerance of Athermal Si-Slot Wavelength
Filters Embedded with Polymer
Y. Atsumi1, J. Kang1,
Y. Hayashi1, J. Suzuki1, N. Nishiyama1, S.
Arai1,2
(1 Tokyo Inst. Tech., 2 QNERC)
P-5
On-Chip Optical Correlator using Photonic
Crystal Slow-Light Devices
N. Ishikura1, T. Baba1
(1 Yokohama Nat'l Univ.)
P-6
Characterization and Size-Reduction of Si Photonic
Crystal Slow Light Modulator
Y. Terada1, H. C. Nguyen1,
N. Yazawa1, T. Watanabe1, T. Baba1
(1 Yokohama Nat'l Univ.)
P-7
High-Speed Delay Tuning in Si Photonic Crystal Slow
Light Device with pin Junction
S. Kinugasa1, N. Ishikura1, R. Hayakawa1,
T. Baba1
(1 Yokohama Nat'l Univ.)
P-8
Design of Si Ring-Resonator-Type Reflector for
GaInAsP/SOI Hybrid Laser
J. Suzuki1, Y. Hayashi1,
J. Kang1, Y. Atsumi1, N. Nishiyama1, S. Arai1,2
(1 Department of Electrical and
Electronic Engineering, Tokyo Inst. Tech., 2 Quantum Nanoelectronics Research Center,
Tokyo Inst. Tech.)
P-9
SiO2 Mask Thickness Dependence of Bandgap
Wavelength Shift in Quantum Well Intermixing for Photonic Integration
J. Lee1, K. Doi1, T. Hiratani1, D. Inoue1,
T. Amemiya2, N. Nishiyama1, S. Arai1,2
(1 Tokyo Inst. Tech., 2 Quantum
Nanoelectronics Res. Center)
P-10
Low-Loss Optical Interlayer Coupling for 3D On-Chip
Optical Interconnect
R. Takei1,2, E. Omoda1,2,
M. Suzuki1,2, S. Manako1,2, T. Kamei1,2, M.
Mori1,2, Y. Sakakibara1,2
(1 AIST, 2 PECST)
P-11
Silicon-Photonics Coherent Optical Modulators and
Demodulators
N. Yazawa1, K. Suzuki1,
H. C. Nguyen1, T. Watanabe1, T. Baba1
(1 Yokohama Nat'l Univ.)
P-12
High-speed and Compact Non-blocking 8×8 InAlGaAs/InAlAs Mach-Zehnder-Type Optical Switch Fabric
H. Koketsu1, S. Kawasaki1,
N. Koyama1, A. Takei2, T. Taniguchi2, Y.
Matsushima1, K. Utaka1
(1 Faculty of Science and Engineering,
Waseda University(Waseda Univ.), 2 Hitachi Ltd. Central Research
Laboratory(Hitachi CRL))
P-13
Triangular-Shaped Coupled Microrings for Si Photonics
WDM (De-)Multiplexers
H. Ito1, N. Ishikura1,
T. Baba1
(1 Yokohama Nat'l Univ.)
P-14
Feasibility Study of High-Performance Optical
Modulators Using Semiconductor-Metal Transition in Graphene
T. Kayoda1, J. Han1,
M. Takenaka1, S. Takagi1
(1 Univ. Tokyo)
P-15
Effect of SCH/Barrier Regions on K-factor of 1.3-mm InAs/GaAs
Quantum Dot Lasers
N. Yasuoka1, M. Ishida2,
M. Ekawa2, T. Yamamoto2, M. Yamaguchi2, K.
Nishi1, M. Sugawara3, Y. Arakawa1
(1 Univ. Tokyo, 2 Fujitsu Labs. Ltd., 3
QD Laser, Inc.)
P-16
Conditions for Polariton Condensation and Photon
Lasing in Quantum Dot Systems
K. Kamide1, S. Kako2,
S. Iwamoto1,2, Y. Arakawa1,2
(1 NanoQuine, Univ.Tokyo, 2 Inst.
Ind. Sci., Univ. Tokyo)
P-17
Investigation on the Q Factor of SiC-Based Photonic
Crystal Nanocavity
S. Jeon1, B. Song1,2,
T. Asano1, Y. Tanaka1, S. Noda1
(1 Dept. of Electron. Sci. and Eng.,
Kyoto Univ., 2 School of Info. and Commun., Sungkyunkwan Univ.)
P-18
Surface Leakage Reduction for Ge Metal-Semiconductor-Metal
Photodetector by GeOx Passivation
J. Kang1, R. Zhang1,2,
M. Takenaka1, S. Takagi1
(1 Univ. Tokyo, 2 Univ. Nanjing)
P-19
Temperature Dependence of Light Emission from
Germanium: A First Principles Study
Y. Suwa1,2,3
(1 PETRA, 2 PECST, 3 Hitachi, Ltd.)
P-20
Enhancement of Dynamic Wavelength Conversion in
Photonic Crystal Slow-Light Waveguide
K. Kondo1, T. Baba1
(1 Yokohama Nat'l Univ.)
P-21
Properties of Ge Waveguides Fabricated by Low
Temperature Seletive Epitaxial Growth and Rapid Thermal Annealing
K. Oda1,2,3, T. Okumura1,2,3,
K. Tani1,2,3, T. Ido1,2,3, S. Kako4, S.
Iwamoto4, Y. Arakawa4
(1 PETRA, 2 PECST, 3 Hitachi, 4 Univ.
Tokyo)
P-22
Low Loss Silicon Wire Waveguide and Multimode Interferometer
Coupler for 1.3-μm Band
H. Takahashi1,2, Y. Onawa1,2,
D. Shimura1,2, H. Okayama1,2, H. Yaegashi1,2,
H. Nishi1,2, H. Fukuda1,2, T. Tsuchizawa1,2,
K. Yamada1,2, N. Hirayama1,3, M. Yamagishi1,3,
S. Saitou1,3, Y. Noguchi1,3, T. Horikawa1,3
(1 PECST, 2 PETRA, 3 AIST)
P-23
Vertical Light Coupling Between Silicon Waveguide and
Single-Mode Fiber Achieved by Vertically Curved Waveguide Using Ion-Induced
Bending Technique
T. Yoshida1, R. Takei1,
T. Nishi1, S. Tajima2, E. Omoda1, M. Nagao1,
N. Miura2, M. Mori1, Y. Sakakibara1,2
(1 AIST, 2 Meiji Univ.)
P-24
Bit Error Rate Analysis of a Si Optical Interposer
Using its Equivalent Circuit
D. Okamoto1,2, T. Akagawa1,2,
T. Usuki1,2, J. Fujikata1,2, S. Akiyama1,2, Y.
Urino1,2, T. Nakamura1,2
(1 PECST, 2 PETRA)
P-25
Light Emission and Detection in Germanium Waveguides
on Lateral Silicon-on-Insulator Diodes
K. Tani1,2,3, K. Oda1,2,3,
T. Okumura1,2,3, T. Mine3, T. Ido1,2,3
(1 PETRA, 2 PECST, 3 Hitachi, Ltd.)
P-26
Low Energy Cost Operation of Hybrid Integrated Light Source on A Silicon Optical Interposer
for Optical Interconnection
N. Hatori1,2, T. Shimizu1,2,
M. Okano2,3, M. Ishizaka1,2, T. Yamamoto1,2,
Y. Urino1,2, M. Mori2,3, T. Nakamura1,2, Y.
Arakawa2,4
(1 PETRA, 2 PECST, 3 AIST, 4 Univ. Tokyo)
P-27
Reduction in Crosstalk of Carrier-Injection
Mach-Zehnder Interferometer Optical Switches by Using III-V CMOS Photonics
Platform
Y. Ikku1, M. Yokoyama1,
M. Noguchi1, O. Ichikawa2, T. Osada2, M. Hata2,
M. Takenaka1, S. Takagi1
(1 Univ. Tokyo, 2 Sumitomo Chemical
Company Ltd.)
P-28
Observation of Enhanced Spontaneous Raman Scattering
in Silicon Grating Waveguides
Y. Hsiao1, S. Iwamoto1,
Y. Arakawa1
(1 Univ. Tokyo)
P-29
High Efficiency Si Optical Modulator with MOS Junction
for 1.55 μm and 1.3 μm Wavelengths
S. Takahashi1,2, M. Takahashi1,3,
J. Fujikata1,2, T. Horikawa1,3, T. Nakamura1,2,
Y. Arakawa1,4
(1 PECST, 2 PETRA, 3 AIST, 4 Univ. Tokyo)
P-30
Study of On-Demand Light Transfer Schemes among
Distant Photonic Crystal Nanocavities
R. Konoike1, T. Asano1,
Y. Tanaka1, S. Noda1
(1 Kyoto Univ.)
P-31
Novel Spot-Size Converter with SiOx Thin Film Slab
Layer
T. Shimizu1,2, H. Takahashi1,2,
N. Hatori1,2, M. Ishizaka1,2, M. Okano1,3, T.
Horikawa1,3
(1 PECST, 2 PETRA, 3 AIST)
P-32
Simulations of Silicon Modulator for Optical Data Transmission
T. Akagawa1,2, S. Akiyama1,2,
T. Baba1,2, M. Imai1,2, T. Usuki1,2
(1 PECST, 2 PETRA)
P-33
Single Photon Source Based on Quantum Dot Embedded in
Nanowire on Silicon
J. Kwoen1, K. Watanabe2,
Y. Ota2, S. Iwamoto1,2, Y. Arakawa1,2
(1 IIS, Univ. Tokyo, 2 NanoQuine)
P-34
Strong Coupling between a Single Semiconductor
Quantum Dot and a High-Q H0 Photonic Crystal Nanocavity
Y. Ota1, D. Takamiya2,
R. Ohta2, N. Kumagai1, S. Ishida2, S. Iwamoto1,2,
Y. Arakawa1,2
(1 Nanoquine, Univ. Tokyo, 2 IIS, Univ. Tokyo)
P-35
Frequency Shift
in Q-factor Control of Photonic Crystal Nanobeam Cavity
R. Ohta1, Y. Ota1, S.
Iwamoto1, Y. Arakawa1
(1 Univ. Tokyo)
P-36
The Effects of
Surfaces and Interfaces on the Carrier Lifetime of Highly n-doped Germanium
Stripes Grown on Silicon
S. Kako1, K. Oda2,3,4, K. Tani2,3,4, T. Ido2,3,4,
Y. Arakawa1
(1 Univ. Tokyo, 2 PETRA, 3 PECST, 4
CRL,HITACHI)
P-37
Manipulation of Circular Polarization in a
Three-Dimensional Semiconductor Chiral Photonic Crystal
S. Takahashi1, A. Tandaechanurat1,
R. Igusa1, Y. Ota1, J. Tatebayashi1, S.
Iwamoto1, Y. Arakawa1
(1 Univ. Tokyo)
P-38
High-Q Nanocavity Design with Vertically
Mirror-Symmetric Three-Dimensional Woodpile Photonic Crystal
J. Fu1, A. Tandaechanurat2,
S. Iwamoto1,2, Y. Arakawa1,2
(1 Univ. Tokyo, IIS, 2 Univ. Tokyo,
NanoQuine)
P-39
Design of a Three-Dimensional Photonic Crystal
Nanocavity with a <110>-Layered Diamond Structure
T. Tajiri1, S. Takahashi2,
A. Tandaechanurat2, S. Iwamoto1,2, Y. Arakawa1,2
(1 Institute of Industrial Science, 2
Institute of Nano Quantum Information Electronics, University of Tokyo)
P-40
EOT Scaling of Plasma Post-Nitrided SiGe Gate Stack
for High Performance MOS Optical Modulators
J. -H. Han1, R. Zhang1,
T. Osada2, M. Hata2, M. Takenaka1, S. Takagi1
(1 University of Tokyo, 2 Sumitomo
Chemical)
P-41
Low Temperature Al2O3 Surface
Passivation for Carrier Injection Type Si/strained SiGe/Si Waveguide Modulator
Y. Kim1, J. Han1, M. Takenaka1,
S. Takagi1
(1 University of Tokyo)
P-42
Novel CVD Process for Ultra-Small Butt-Joint
Germanium Photodetector
M. Miura1,2, J. Fujikata1,2,
M. Noguchi1,2, T. Horikawa1,3, Y. Arakawa1,4
(1 PECST, 2 PETRA, 3 AIST, 4 Univ. Tokyo)
P-43
High Efficiency Inter-Layer Amorphous Silicon Grating
Couplers with Metal Mirrors for On-Chip 3D Interconnects
J. Kang1, Y. Atsumi1, Y. Hayashi1,
J. Suzuki1, Y. Kuno1, T. Amemiya1, N.
Nishiyama1, S.Arai1
(1 Tokyo Institute of Technology)
P-44
MOCVD Growth of High Density InAs-stacked Quantum
Dots on Ge/Si Substrate and its Electroluminescence Characteristics for Silicon
Photonics Application
M. Rajesh1, K. Tanabe1, S. Kako1,
M. Nishioka1, Y. Arakawa1
(1 University of Tokyo)
P-45
Study on Selective Epitaxial Growth of Ge on
Submicron Scaled Si Trenches
Y. Mizuno1, N. Kawai1, K. Wada1
(1 University of Tokyo)